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セミナーのお知らせ:Irmantas Kasalynas氏 (Professor, Centre for Physical Sciences and Technology (FTMC) and Faculty of Physics, Vilnius university)
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日時：２０２６年３月１９日（木）13:00～14:30
場所：東京大学理学部1号館3階340号室
講演者：Irmantas Kasalynas 氏
(Professor, Centre for Physical Sciences and Technology (FTMC) and
Faculty of Physics, Vilnius university)
講演題目:Development of maskless technologies of wide bandgap semiconductor devices by laser micro-processing
Abstract
The wide band gap semiconductors (GaN, GaO) are very important for high electron mobility transistor (HEMT), Schottky barrier diode (SBD), power and RF devices as well as THz plasmonic applications. In general processing, the masks are necessary to obtain the patterns on the device top surface, then use inductive coupling plasma reactive ion etching (ICP-RIE) to get the mesa or isolation purposes, or to deposit metals and conductive materials for contact purposes. Here we develop the laser-based micro-processes for contact formation on HEMT and SBD devices using the lasers operating at femtosecond and nanosecond pulse duration range in comparison to traditional processing technologies such as UV photolithography through photomask and ICP-RIE. In this work we report on laser-based micro-processing technique proposed for device isolation and ohmic contacts formation in AlGaN/GaN HEMTs and SBDs. Femtosecond laser source is employed and directly compared with UV photolithography. Mask-less laser micro-machining enables localized material removal and controlled recessing below the barrier layers. Electrical characterization using current-voltage (I-V) measurements demonstrates the formation of effective device isolation and low-resistance ohmic contacts. The results indicate that laser-based micro-processing offers a viable alternative to conventional fabrication routes, reducing process complexity and material consumption while enabling advanced recessed contact architectures in GaN- as well as GaO-based devices.
使用言語：English/英語
紹介教員：小西 邦昭
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